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| Transistor 2SC1360, 2SC1360A Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image Unit: mm 5.90.2 4.90.2 q q High transition frequency fT. Large collector power dissipation PC. (Ta=25C) Ratings 50 60 45 60 4 50 1 150 -55 ~ +150 Unit V 2.540.15 +0.3 +0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SC1360 2SC1360A 2SC1360 VCBO VCEO VEBO IC PC Tj Tstg Symbol emitter voltage 2SC1360A Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature V 0.45-0.1 0.45-0.1 1.27 +0.2 V mA W C C 1.27 13.50.5 0.7-0.2 0.70.1 8.60.2 s Features s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SC1360 2SC1360A 2SC1360 2SC1360A (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE VCE(sat) fT Cre PG Conditions VCB = 20V, IE = 0 IC = 100A, IE = 0 IC = 1mA, IB = 0 IE = 100A, IC = 0 VCB = 10V, IE = -10mA IC = 20mA, IB = 2mA VCB = 10V, IE = -10mA, f = 100MHz VCE = 10V, IC = 1mA, f = 10.7MHz VCB = 10V, IE = -10mA, f = 58MHz 22 300 1.5 30 50 60 45 60 4 20 100 0.4 V MHz pF dB min typ max 100 Unit nA V 3.2 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC-51 TO-92L Package V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Common emitter reverse transfer capacitance Power gain 1 Transistor PC -- Ta 1.2 80 70 1.0 2SC1360, 2SC1360A IC -- VCE 60 25C VCE=10V IC -- VBE Collector power dissipation PC (W) Collector current IC (mA) 60 1.6mA 50 40 30 20 10 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA 0.8 Collector current IC (mA) IB=2.0mA 1.8mA 50 Ta=75C 40 -25C 0.6 30 0.4 20 0.2 10 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 25C 0.1 -25C 0.03 0.01 0.1 Ta=75C IC/IB=10 120 hFE -- IC 600 VCE=10V VCB=10V Ta=25C fT -- I E Forward current transfer ratio hFE 100 Transition frequency fT (MHz) 30 100 500 80 Ta=75C 60 25C 40 -25C 400 300 200 20 100 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25C Cre -- VCE Common emitter reverse transfer capacitance Cre (pF) -2.4 IC=1mA f=10.7MHz Ta=25C 30 PG -- IE VCB=10V f=58MHz Ta=25C 3.0 2.5 -2.0 25 2.0 -1.6 Power gain PG (dB) 1 3 10 30 100 20 1.5 -1.2 15 1.0 - 0.8 10 0.5 - 0.4 5 0 1 3 10 30 100 0 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) Emitter current IE (mA) 2 |
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